ESTUDIO DE PARÁMETROS MEDIANTE SIMULACIÓN PARA OPTIMIZACIÓN DE UN MESFET DE ZNO (STUDY OF SIMULATING PARAMETERS TO OPTIMIZE A MESFET OF ZNO)

Armando Gregorio Rojas Hernández, Alicia Vera Marquina, Ana Lilia Leal Cruz, Antonio Ramos Carrasco, Rodolfo Rodríguez Dávila, Manuel Quevedo López

Resumen


Resumen
En este trabajo se realiza un estudio de los parámetros principales que afectan el desempeño de una unión rectificadora Schottky que es la base del control del canal en un MESFET de ZnO. Los parámetros estudiados son el grosor a, el ancho de compuerta y las distancias de separación entre la compuerta y la fuente , y entre la compuerta y el drenaje . Así como diferentes metales para el contacto rectificador de compuerta, del análisis se encuentra que la estructura de Paladio de 500nm de y con un grosor y una concentración de da , la mejor rectificación y valores de resistencia serie de 0.076 ohms que son característicos de este material.
Palabras Clave: Diseño de dispositivos, física de semiconductores, microelectrónica.

Abstract
In this work is realized a study of the main parameters and the effects of the behavior of a rectifier Schottky junction that is used as a base to channel control of a ZnO MESFET. The parameters considered are thickness a, gate width , and the lengths of the source at gate and gate at drain . Different metals are considered like rectifier contact of the gate, results of the analysis shown that the Palladium structure of 500nm of and 500nm= with thickness and a free carrier density of yield , the best rectification and values of serial resistance of 0.076 Ohms are typical of this material.
Keywords: Device design, microelectronic, physics of semiconductors.

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Referencias


Allen M.W., Durbin S. M. and Metson J. B., Silver oxide Schottky contacts on n-type , Appl. Phys. Lett. 91, 053512, 2007.

Di Benedetto Luigi, Gian Domenico Licciardo, Member, IEEE, Roberta Nipoti, and Salvatore Bellone, Member, IEEE, On the Crossing-Point of 4H-SiC Power Diodes Characteristics, IEEE Electron Device Letters, vol. 35, no. 2, p. 1-3, February 2014.

Elzwawi S, Hyland A., Lynam M., Partridge J. G., McCulloch D. G. and Allen M. W., Effect of Schottky gate type and channel defects on the stability of transparent MESFETs, Semicond. Sci. Technol. 30, pp.024008, 2015.

Frenzel H., Lajn A., Brandt M., Von Wenckstern H., Biehne G., Hochmuth H., Lorenz M., and Grundmann M., metal-semiconductor field-effect transistors with Ag-Schottky gates, Appl. Phys. Lett. 92, 192108, 2008.

Frenzel H., Lajn A., Von Wenckstern H., Lorenz M., Schein F., Zhang Z., and Grundmann M., Recent progress on -based metalsemiconductor field-effect transistors and their application in transparent integrated circuits, Adv. Mater., vol. 22, no. 47, pp. 5332–5349, Dec. 2010.

Grundmann M., H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, and M. Lorenz, -based MESFET Devices, Mater. Res. Soc. Symp. Proc. Vol. 1201, 2010.

Herbert B. Michaelson, The work function of the elements and its periodicity, J. Appl. Phys. 48, 4729, 1977.

Kao C. J., Kwon Y. W., Heo Y. W., Norton D. P., Pearton S. J., Ren F., and Chi G. C. , Comparison of metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 23, 1024, 2005.

Klingshirn C., R. Hanschid, H. Priller, M. Decker, J. Zeller, H. Kalt, Superlattices and Microstructures, 38, pp. 209-222, 2005.

Klüpfel Fabian Johannes, Friedrich Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann, Comparison of -Based JFET, MESFET, and MISFET, IEEE Transactions on Electron Devices, vol. 60, no. 6, June 2013.

Klüpfel Fabian J., Holger von Wenckstern, and Marius Grundmann, Ring Oscillators Based on Channel JFETs and MESFETs, Adv. Electron. Mater, 1500431, pp. 1-5, 2016.

Lajn A., Wenckstern H. V., Zhang Z., Czekalla C., Biehne G., Lenzner J., Hochmuth H. , Lorenz M., Grundmann M., Wickert S., Vogt C., and Denecke R., Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type , J. Vac. Sci. Technol. B 27, 1769-1773, 2009.

Lorenz M., H. von Wenckstern, and M. Grundmann, Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors, Adv. Mater., vol. 23, no. 45, pp. 5383–5386, Dec. 2011.

Salina Muhamad, Mohamad Zainizan Sahdan, Mohamad.Haufiz Mamat and Mohamad Rusop, I-V Performances of Aligned Nanorods/MgO.3 .70 Thin Film Heterojunction for MESFET Applications, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), 1-3 December 2010.

Schein F., H. von Wenckstern, H. Frenzel, and M. Grundmann, -based n-channel junction field-effect transistor with roomtemperature- fabricated amorphous p-type ZnCo2O4 gate, IEEE Electron Device Lett., vol. 33, no. 5, pp. 676–678, May 2012.

Schifano R., E. V. Monakhov, U. Grossner, and B. G. Svensson, Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown , Appl. Phys. Lett. 91, 193507, 2007.

Sze, Semiconductor Devices Physics Technology, 2nd Ed, Wiley, pp. 242, 2002.

Vogt Sofie, Holger von Wenckstern, and Marius Grundmann, MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature, APPLIED PHYSICS LETTERS 113, 133501, 2018.

Von Wenckstern H., Z. P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn and M. Grundmann, Light beam induced current measurements on Schottky diodes and MESFETs, Mater. Res. Soc. Symp. Proc. Vol. 1201, 2010.






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