ESTUDIO TEÓRICO – EXPERIMENTAL DE PELÍCULAS DE GAN PARA SIMULACIÓN DE DIODO EMISOR DE LUZ (THEORETICAL – EXPERIMENTAL STUDY OF GAN FILMS FOR LIGHT-EMITTING DIODE SIMULATION)

Gerardo Valenzuela Hernández, Dainet Berman Mendoza, Antonio Ramos Carrazco, Sergio De la Cruz, Roger Castillo Palomera

Resumen


Resumen
Este trabajo presenta el proceso de síntesis de películas de nitruro de galio (GaN) con sitios de nucleación de oro, y la síntesis de películas de GaN tipo p utilizando magnesio, mediante la técnica de depósito por vapor químico (CVD). Con el objetivo de estudiar el crecimiento del semiconductor, se empleó un diseño de experimentos factorial con temperatura, substrato y capa de oro como factores. Los resultados de la caracterización de los materiales de GaN y GaN:Mg fueron obtenidos mediante las técnicas de SEM, XRD, XPS, CL y PL. Con base a lo anterior, la presencia del contaminante Mg en el GaN tipo-p fue demostrada. También, la emisión característica del GaN y GaN:Mg en la región del ultravioleta (UV) y luminiscencia azul (BL) fue analizada. Mediante el estudio del estado del arte de GaN y COMSOL Multiphysics, se obtuvieron los resultados ópticos y eléctricos del diodo electroluminiscente de GaN/GaN:Mg. Como resultado, un voltaje de disparo de , eficiencias interna y luminosa del LED de 84 % y 210.7 lm/W, fueron obtenidos.
Palabras clave: GaN, unión p-n, Simulación COMSOL.

Abstract
The following work presents the synthesis process of gallium nitride films with gold nucleation sites, and the synthesis of p-type magnesium doped GaN films, employing the chemical vapor deposition technique (CVD). The study of semiconductor growth was reached using a factorial design with temperature, substrate and gold films as factors. Wurtzite GaN and GaN:Mg were analyzed through CL, SEM, EDS, PL and XPS characterization results. The presence of Mg in p-GaN was demonstrated by XPS results. Also, the characteristic UVL and BL of GaN and GaN:Mg were analyzed. Electrical and optical results of GaN based electroluminescent diode were obtained from GaN state of the art study and COMSOL Multiphysics with threshold voltage . Internal and luminous efficiencies of the simulated LED with 84 % and 210.7 lm/W, respectively, reported majority contribution of direct recombination in the device.
Keywords: GaN, COMSOL Simulation, p-n junction.

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Referencias


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